Simulazioni (I) We need an extensive numerical simulation of SDD electrical behaviour.
{"Image DocumentName": "Simulazioni (I)We need an extensive numerical simulation of SDD electrical behaviour.", "Image ImageDescription": "The simulation of a complete large area detector cannot be performed because of the huge amount of memory required. Hence the calculation has to be done on limited portions of the device, introducing artificial boundary conditions. We use a 2D approximation ( 3D differential equations would in principle be required) This approximation can be done if we consider cross sections orthogonal to the cathodes in such a way that the partial derivative along the third dimension is negligible. We use ATLAS device simulation software produced by SILVACO. The simulations regard the following regions: collection zone. drift region. guard region. injectors.", "Image XResolution": "37", "Image YResolution": "37", "Image ResolutionUnit": "Pixels/Centimeter", "Image Software": "SlidePlayer", "Image YCbCrPositioning": "Centered"}