4 December 2002, ITRS 2002 Update Conference - Tokyo 2003 Program Summary 1 Requirements and potential solutions for next generation silicon substrate (450mm ) Consider Site Flatness Model proposed by JEITA Update SOI requirements and potential solutions, including (Strained) Si:Ge on buried oxide Update Starting Substrate Defect Densities to reflect updated DRAM and MPU active areas Surface Prep: Review drivers for critical metals
{}