Buried heterostructure lasers
{"Image DocumentName": "Buried heterostructure lasers", "Image ImageDescription": "strong index-guided laser. the active volume is completely buried in a material of wider bandgap and lower refractive index. the optical field is well confined both in the transverse and lateral directions within these lasers, providing strong index-guiding of the optical mode together with good carrier confinement. The higher bandgap, low reflective index confinement material is AlGaAs for GaAs and it is InP in InGaAsP lasers. Confinement of the injected current to the active region is obtained through the reverse biased junctions of the higher bandgap material. The strong lateral optical and current confinement provided by these devices lead to lower threshold currents ~10 to 20mA. Double channel planar BH InGaAsP/InP laser.", "Image XResolution": "37", "Image YResolution": "37", "Image ResolutionUnit": "Pixels/Centimeter", "Image Software": "SlidePlayer", "Image YCbCrPositioning": "Centered"}