Review: p-n Junction Volt-Ampere Characteristic of Diode = type of semiconductor factor ( for Si = 2, Ge = 1 ) V T = Volt-Equivalent of Temperature = 25 mV (at 293 o K) VDVD IDID ISIS VZVZ V (0.6 - 0.7 for Si) (0.2 - 0.3 for Ge)
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