6HP SiGe Process: Base-after-Gate Integration SiGe Bipolar is integrated into CMOS process SiGe film deposited with Low Temperature Epi (LTE) tool with Ge atomically graded from 0% to about 10% and back to 0% within the (<500A) base film NPN built after CMOS is structurally completed Minimize NPN thermal budget Utilized in technologies 0.25 um and beyond 0.13 um 210 GHz Ft SiGe HBTs – Expanding the Horizons of SiGe BICMOS , Joseph, et al, IBM, IEEE ISSCC, Paper 11.1, Feb.
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