Background Finfet threshold voltage VT Φms and Cox tuning
{"Image DocumentName": "Background Finfet threshold voltage VT \u03a6ms and Cox tuning", "Image ImageDescription": "10. Finfet threshold voltage VT. \u03a6ms and Cox tuning. Independent-gate FinFETs. Electrically isolated, electrostatically coupled. Vth-dependence model [Colinge 2008] Vth-front = Vth-front0 \u2013 \u03b4 (Vgbs \u2013 Vth-back) if Vgbs < Vth-back. Vth-front = Vth-front0 in all other cases. Substrate-like effect in planar CMOS. By removing the top oxide; we can have independent mode operation; with higher routing and process costs. So, this backgate can be exploited like the substrate in planar technologies. 10.", "Image XResolution": "37", "Image YResolution": "37", "Image ResolutionUnit": "Pixels/Centimeter", "Image Software": "SlidePlayer", "Image YCbCrPositioning": "Centered"}