Nanomechanical Memory (NEMM)
{"Image DocumentName": "Nanomechanical Memory (NEMM)", "Image ImageDescription": "Difficult Challenges. Scalability. W. Y. Choi, T. Osabe and T-S. K. Liu, Nano-electro-mechanical nonvolatile memory (NEMory) cell design and scaling , IEEE Trans. Electron Dev. 55 (2008) Reliability/Endurance. typically fail after ~100 switching cycles. [B4] J-W. Han, J-H. Ahn, Y-K. Choi, FinFACT - fin flip-flop actuated channel transistor , IEEE Electron Dev. Lett. 31 (2010) 764. J. Andazane et al., Two-terminal nanoelectromechanical devices based on germanium nanowires , Nano Lett. 9 (2009) K. Lee and W. Y. Choi, Nanoelectromechanical Memory Cell (T Cell) for Low-Cost Embedded Nonvolatile Memory Applications , IEEE Trans. Electron Dev. 58 (2011) O. Loh; X. Wei; C .Ke; et al. Robust Carbon-Nanotube-Based Nano-electromechanical Devices: Understanding and Eliminating Prevalent Failure Modes Using Alternative Electrode Materials , SMALL 7 (2011) Y. Choi and T-J. K. Liu, Reliability of nanoelectromechanical nonvolatile memory (NEMory) cells , IEEE Electron Dev. Lett. 30 (2009) Best projected. >50 nm [B1, B2] Demonstrated. 500 nm [B3, B4] Low voltage (~ 1V) operation. Demonstrated. ~1E3 [B4] Should NEMM be in ERD in 2013?", "Image XResolution": "37", "Image YResolution": "37", "Image ResolutionUnit": "Pixels/Centimeter", "Image Software": "SlidePlayer", "Image YCbCrPositioning": "Centered"}